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(R)
MJD2955 MJD3055
COMPLEMENTARY SILICON POWER TRANSISTORS
s s
s
STM PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO MJE2955 AND MJE3055
APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance.
3 1
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC IB P t ot Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 C
o
Value MJD3055 MJD2955 60 70 5 10 6 20
Uni t
V V V A A W
June 1998
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MJD2955 / MJD3055
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEX I CBO I CEO I EBO V CEO(sus) V CE(sat ) V BE(on) h FE fT Parameter Collector Cut-off Current Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain DC Current G ain Test Cond ition s V CB = 70 V V BE = -1.5V V CB = 70 V V BE = -1.5V Tj = 150 o C V CB = 70 V V CB = 70 V V CB = 30 V V EB = 5 V I C = 30 mA IC = 4 A I C = 10 A IC = 4 A IC = 4 A I C = 10 A I C = 0.5 A IB = 0.4 A I B = 3.3 A V CE = 4 V V CE = 4 V V CE = 4 V VCE = 10 V f = 500 KHz 20 5 2 60 1.1 8 1.8 100 MHz T j = 150 o C Min. Typ . Max. 0.2 2 0.2 2 50 0.5 Un it A A A A A mA V V V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP type voltage and current values are negative.
Safe Operating Area
Derating Curves
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MJD2955 / MJD3055
DC Current Gain (NPN type) DC Current Gain (PNP type)
DC Transconductance
DC Transconductance (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
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MJD2955 / MJD3055
Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type)
Transition Frequency (NPN type)
Transition Frequency (PNP type)
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MJD2955 / MJD3055
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A" B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
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MJD2955 / MJD3055
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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